1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.1993757
/content/aip/journal/apl/87/1/10.1063/1.1993757
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1993757
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view of LED samples after the patterned LLO process. Samples shown in the upper left image are with a pitch of and a chip size of . The SEM image details the surface of a VM-LED after the patterned LLO process.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the fabricated device structures: (a) the VM-LED with electroplating nickel substrate and (b) regular LED with the same epilayer structure and die size.

Image of FIG. 3.
FIG. 3.

Comparison of the measured characteristics of VM-LED and regular LED.

Image of FIG. 4.
FIG. 4.

Comparison of the measured -I characteristics of VM-LEDs and regular LEDs. The inset shows the typical picture of light emission from the VM-LED at 20 mA.

Loading

Article metrics loading...

/content/aip/journal/apl/87/1/10.1063/1.1993757
2005-07-01
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/1/10.1063/1.1993757
10.1063/1.1993757
SEARCH_EXPAND_ITEM