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THz electroluminescence spectra for (a) a sample containing boron and (b) a sample containing phosphorus.
Integrated absorption for samples P3 (phosphorus at , and B3 (boron at ), in the spectral range of .
THz absorption from boron doped silicon wafer B3 with temperature. The wafer has a resistivity of , giving a boron concentration of .
THz absorption from phosphorus-doped silicon wafer P3 with temperature. The wafer has a resistivity of , giving a phosphorus concentration of .
Wafer labels and corresponding resistivity and doping concentrations (P—phosphorus and B—boron).
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