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Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon
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10.1063/1.2042544
/content/aip/journal/apl/87/10/10.1063/1.2042544
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/10/10.1063/1.2042544

Figures

Image of FIG. 1.
FIG. 1.

THz electroluminescence spectra for (a) a sample containing boron and (b) a sample containing phosphorus.

Image of FIG. 2.
FIG. 2.

Integrated absorption for samples P3 (phosphorus at , and B3 (boron at ), in the spectral range of .

Image of FIG. 3.
FIG. 3.

THz absorption from boron doped silicon wafer B3 with temperature. The wafer has a resistivity of , giving a boron concentration of .

Image of FIG. 4.
FIG. 4.

THz absorption from phosphorus-doped silicon wafer P3 with temperature. The wafer has a resistivity of , giving a phosphorus concentration of .

Tables

Generic image for table
Table I.

Wafer labels and corresponding resistivity and doping concentrations (P—phosphorus and B—boron).

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/content/aip/journal/apl/87/10/10.1063/1.2042544
2005-09-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/10/10.1063/1.2042544
10.1063/1.2042544
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