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Properties of W–Ge–N as a diffusion barrier material for Cu
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10.1063/1.2042534
/content/aip/journal/apl/87/11/10.1063/1.2042534
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042534
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of as-deposited and annealed films at different temperature of (a) films and (b) W–Ge–N films.

Image of FIG. 2.
FIG. 2.

AES depth profiles of (a) as-deposited, (b) annealed at , and (c) annealed at .

Image of FIG. 3.
FIG. 3.

AES depth profiles of (a) as-deposited, (b) annealed at , and (c) annealed at .

Image of FIG. 4.
FIG. 4.

Resistivity vs annealing temperature (a) for W–Ge–N and films. Also shown (b) is the resistivity as a function of sputter target power for the Ge and W targets.

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/content/aip/journal/apl/87/11/10.1063/1.2042534
2005-09-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of W–Ge–N as a diffusion barrier material for Cu
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042534
10.1063/1.2042534
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