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SEM images of the SiNTs arrays after partial removal of the AAO pore wall and the nickel oxide cores: (a) Top view and (b) and (c) side views. (d) XRD pattern recoded from the SiNT arrays. Scale bar: (a) 400 nm, (b) , and (c) 400 nm.
TEM image of (a) the SiNTs, and (b)–(d) the individual SiNT with different wall thicknesses. Scale bar: (a) 250 nm and (b)–(d) 50 nm. (e) High-resolution TEM image of the SiNT. Scale bar: 5 nm. (f) EDS spectrum taken from an individual SiNT.
Raman spectra of the SiNTs with different wall thicknesses: (a) , (b) , and (c) . The accuracy of the measurement is .
Schematic illustration of the CVD process for preparing uniform SiNTs in the annular nanochannel template.
characteristics of a SiNT array emitter at different anode-sample separations. Inset: The corresponding FN plot.
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