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Controlling growth and field emission properties of silicon nanotube arrays by multistep template replication and chemical vapor deposition
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10.1063/1.2042545
/content/aip/journal/apl/87/11/10.1063/1.2042545
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042545
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of the SiNTs arrays after partial removal of the AAO pore wall and the nickel oxide cores: (a) Top view and (b) and (c) side views. (d) XRD pattern recoded from the SiNT arrays. Scale bar: (a) 400 nm, (b) , and (c) 400 nm.

Image of FIG. 2.
FIG. 2.

TEM image of (a) the SiNTs, and (b)–(d) the individual SiNT with different wall thicknesses. Scale bar: (a) 250 nm and (b)–(d) 50 nm. (e) High-resolution TEM image of the SiNT. Scale bar: 5 nm. (f) EDS spectrum taken from an individual SiNT.

Image of FIG. 3.
FIG. 3.

Raman spectra of the SiNTs with different wall thicknesses: (a) , (b) , and (c) . The accuracy of the measurement is .

Image of FIG. 4.
FIG. 4.

Schematic illustration of the CVD process for preparing uniform SiNTs in the annular nanochannel template.

Image of FIG. 5.
FIG. 5.

characteristics of a SiNT array emitter at different anode-sample separations. Inset: The corresponding FN plot.

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/content/aip/journal/apl/87/11/10.1063/1.2042545
2005-09-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling growth and field emission properties of silicon nanotube arrays by multistep template replication and chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042545
10.1063/1.2042545
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