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Effects of the oxygen precursor on the electrical and structural properties of films grown by atomic layer deposition on Ge
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10.1063/1.2042631
/content/aip/journal/apl/87/11/10.1063/1.2042631
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042631

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images and corresponding AFM surface morphology of films grown using [(a) and (b)] and [(c) and (d)] as oxygen sources. The distance among ten planes is shown in (a). The AFM images are side and the grey scale corresponds to .

Image of FIG. 2.
FIG. 2.

Grazing incidence XRD spectra (a) of thick films deposited using (bottom) and (top). (b) Bragg–Brentano analysis of the film deposited using .

Image of FIG. 3.
FIG. 3.

TOF-SIMS depth profiles of thick grown using (a) and (b).

Image of FIG. 4.
FIG. 4.

characteristics at different frequencies of the thick film grown using (gate area: ). Inset: Leakage currents for different thicknesses of films grown using .

Image of FIG. 5.
FIG. 5.

CET as a function of physical thickness for films grown using . The CET of a thick film grown using is also shown.

Tables

Generic image for table
Table I.

Thickness , electronic density , and root-mean-square surface roughness of the films and of the IL at the interface. The error on the last digit is indicated in the brackets.

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/content/aip/journal/apl/87/11/10.1063/1.2042631
2005-09-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042631
10.1063/1.2042631
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