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Defect dissolution in strain-compensated stacked quantum dots grown by metalorganic chemical vapor deposition
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10.1063/1.2042638
/content/aip/journal/apl/87/11/10.1063/1.2042638
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042638
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Growth sequence of active region.

Image of FIG. 2.
FIG. 2.

RTPL intensity and spectra as function of flushing time.

Image of FIG. 3.
FIG. 3.

TEM image of a five-stack QD active with 4 ML GaP SC layers and flushing.

Image of FIG. 4.
FIG. 4.

rms roughness of five-stack obtained from AFM scans as function of In-flushing time. The insets show AFM images of structure without flushing (top), with flushing (middle right), and with flushing (bottom left).

Image of FIG. 5.
FIG. 5.

AFM images showing the top layer of uncapped surface QD of five-stack (a) without SC, and (b) with 4 ML GaP SC, (c) with 4 ML GaP SC and In flush and (d) single stack QD.

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/content/aip/journal/apl/87/11/10.1063/1.2042638
2005-09-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect dissolution in strain-compensated stacked InAs∕GaAs quantum dots grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2042638
10.1063/1.2042638
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