1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Annealing behavior of hydrogen-plasma-induced -type HgCdTe
Rent:
Rent this article for
USD
10.1063/1.2043239
/content/aip/journal/apl/87/11/10.1063/1.2043239
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2043239
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependent mobility and Hall coefficient of the type converted HgCdTe wafer; anomalous Hall effect was fitted into the layer model.

Image of FIG. 2.
FIG. 2.

Carrier concentration and mobility change according to baking process; filled and open data points are -type and -type, respectively. (a) carrier concentration change of hydrogenated wafer; (b) carrier mobility change of hydrogenated wafer.

Image of FIG. 3.
FIG. 3.

Time taken for type reconversion according to the annealing time; activation energy of the process has no relation to the species of gas used during type conversion process. The difference between the two processes is due to the initial junction depth difference.

Image of FIG. 4.
FIG. 4.

Infrared transmission spectra of 10 h annealed HgCdTe wafers; even though the wafers are completely reconverted into -type, the passivation effect of hydrogen can be observed.

Loading

Article metrics loading...

/content/aip/journal/apl/87/11/10.1063/1.2043239
2005-09-07
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing behavior of hydrogen-plasma-induced n-type HgCdTe
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2043239
10.1063/1.2043239
SEARCH_EXPAND_ITEM