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Temperature dependent mobility and Hall coefficient of the type converted HgCdTe wafer; anomalous Hall effect was fitted into the layer model.
Carrier concentration and mobility change according to baking process; filled and open data points are -type and -type, respectively. (a) carrier concentration change of hydrogenated wafer; (b) carrier mobility change of hydrogenated wafer.
Time taken for type reconversion according to the annealing time; activation energy of the process has no relation to the species of gas used during type conversion process. The difference between the two processes is due to the initial junction depth difference.
Infrared transmission spectra of 10 h annealed HgCdTe wafers; even though the wafers are completely reconverted into -type, the passivation effect of hydrogen can be observed.
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