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Strain-induced shift of the -phonon line obtained from Raman spectra of the investigated (In,Ga)(As,N) layers given by .
Raman spectra of (In,Ga)(As,N) layers with and (a) before and (b) after thermal annealing as well as (c) the spectrum of an annealed layer with and . The mismatch strain values are indicated.
Density of states for N-related vibrational modes in (In,Ga)(As,N) with different configurations of nearest neighbors as indicated. The chosen Ga–N force constants are given in terms of the Ga–As force constant .
Annealing-induced change in the abundance of In–N bonds as a function of nominal mismatch strain, where is the Raman intensity of N with one In atom as nearest neighbor normalized to the one of N with four Ga neighbors before (after) annealing.
In content , N content , and average strain of the investigated (In,Ga)(As,N) layers.
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