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Mismatch strain as a driving force for the annealing-induced formation of In–N bonds in (In,Ga)(As,N)
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10.1063/1.2043251
/content/aip/journal/apl/87/11/10.1063/1.2043251
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2043251

Figures

Image of FIG. 1.
FIG. 1.

Strain-induced shift of the -phonon line obtained from Raman spectra of the investigated (In,Ga)(As,N) layers given by .

Image of FIG. 2.
FIG. 2.

Raman spectra of (In,Ga)(As,N) layers with and (a) before and (b) after thermal annealing as well as (c) the spectrum of an annealed layer with and . The mismatch strain values are indicated.

Image of FIG. 3.
FIG. 3.

Density of states for N-related vibrational modes in (In,Ga)(As,N) with different configurations of nearest neighbors as indicated. The chosen Ga–N force constants are given in terms of the Ga–As force constant .

Image of FIG. 4.
FIG. 4.

Annealing-induced change in the abundance of In–N bonds as a function of nominal mismatch strain, where is the Raman intensity of N with one In atom as nearest neighbor normalized to the one of N with four Ga neighbors before (after) annealing.

Tables

Generic image for table
Table I.

In content , N content , and average strain of the investigated (In,Ga)(As,N) layers.

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/content/aip/journal/apl/87/11/10.1063/1.2043251
2005-09-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mismatch strain as a driving force for the annealing-induced formation of In–N bonds in (In,Ga)(As,N)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2043251
10.1063/1.2043251
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