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The schematic representation of the triangular voltage signal (a) and of the semiconductor film with back-to-back Schottky contacts in two opposite situations (b) and (c), marked on the wave form signal by points “1” and “2,” respectively. The gray areas near the contacts show the region occupied by the traps. denotes the thickness of the two depletion regions at time . and denote the thickness of the two depletion regions at times 1 and 2, respectively. In (b), the depletion thickness is smaller than the trap region thickness at the left contact, whereas the opposite situation at the moment 2 is presented in (c).
The voltage dependence of the current due to the carrier emission from the traps. Parameters in Eq. (5) used for simulation were: electrode area , , . The frequency was for the curve (a) and for (b).
The hysteresis loop obtained by the numerical integration of the current-voltage dependencies presented in Fig. 2 for two frequencies: (a) and (b) . The arrows show a counterclockwise orientation of the loops, as for a normal ferroelectric hysteresis. The loop (b) was magnified ten times on the polarization axis.
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