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Raman maps of five different sets of test structures, labeled from A to E. The scheme of the alternation of active areas (dark) and isolations is drawn under the maps. A detailed description of each group can be found in Table I. The inset shows a sketch of the cross section of shallow trenches and active areas.
(a) Evolution of the stress with the advance of the manufacturing process for the test structures E reported in Fig. 1 and Table I. (b) Evolution of the stress of ruled memory devices. In panel (b), the data for steps from 6 to 10 are missing as the structures are masked by an opaque layer.
Description of the sets of test structures. The labeling corresponds to Fig. 1.
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