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Raman spectroscopy of strain in subwavelength microelectronic devices
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10.1063/1.2045545
/content/aip/journal/apl/87/11/10.1063/1.2045545
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045545

Figures

Image of FIG. 1.
FIG. 1.

Raman maps of five different sets of test structures, labeled from A to E. The scheme of the alternation of active areas (dark) and isolations is drawn under the maps. A detailed description of each group can be found in Table I. The inset shows a sketch of the cross section of shallow trenches and active areas.

Image of FIG. 2.
FIG. 2.

(a) Evolution of the stress with the advance of the manufacturing process for the test structures E reported in Fig. 1 and Table I. (b) Evolution of the stress of ruled memory devices. In panel (b), the data for steps from 6 to 10 are missing as the structures are masked by an opaque layer.

Tables

Generic image for table
Table I.

Description of the sets of test structures. The labeling corresponds to Fig. 1.

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/content/aip/journal/apl/87/11/10.1063/1.2045545
2005-09-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman spectroscopy of strain in subwavelength microelectronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045545
10.1063/1.2045545
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