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Selectively excited photoluminescence from Eu-implanted GaN
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10.1063/1.2045551
/content/aip/journal/apl/87/11/10.1063/1.2045551
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045551
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of AlN-capped GaN implanted with , after annealing at . Excited above band gap (solid line) and below band gap (dotted line) by a xenon lamp.

Image of FIG. 2.
FIG. 2.

normalized PLE spectra of AlN-capped GaN implanted with , after annealing at , detected at the three main peaks, , , and . Also shown (dotted line) is the difference between the first and last PLE spectra.

Image of FIG. 3.
FIG. 3.

Integrated PL peak intensity for different excitation sources. The intensity is calculated from a fitting of four Lorentzian peaks to each of the PL spectra and is normalized to the intensity at for each excitation source. (∗ refers to laser excitation and ∧ refers to lamp excitation.)

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/content/aip/journal/apl/87/11/10.1063/1.2045551
2005-09-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selectively excited photoluminescence from Eu-implanted GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045551
10.1063/1.2045551
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