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(a). Transverse magnetoresistance vs magnetic field for the unintentionally doped sample containing carriers, Sample A, at selected temperatures; (b) shows the magnetoresistance for various doped samples recorded at 1.65 K. The carrier concentrations are given in the figure.
Least-squares fits (solid line) to the semiempirical model given in Eq. (6). The figure shows plots for Sample A in (a) and Sample B in (b) at various temperatures.
Fit parameter is plotted vs the inverse temperature of Samples A, B, and C. All samples show the dependency of the fit parameter, which is denoted by the solid line.
Carrier concentration, mobility, and resistivity of the used ZnO and samples at 1.65 K and RT.
Values of the parameters , , , and obtained from least-squares fits to the data.
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