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Magnetoresistance in epitaxially grown degenerate ZnO thin films
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10.1063/1.2045553
/content/aip/journal/apl/87/11/10.1063/1.2045553
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045553

Figures

Image of FIG. 1.
FIG. 1.

(a). Transverse magnetoresistance vs magnetic field for the unintentionally doped sample containing carriers, Sample A, at selected temperatures; (b) shows the magnetoresistance for various doped samples recorded at 1.65 K. The carrier concentrations are given in the figure.

Image of FIG. 2.
FIG. 2.

Least-squares fits (solid line) to the semiempirical model given in Eq. (6). The figure shows plots for Sample A in (a) and Sample B in (b) at various temperatures.

Image of FIG. 3.
FIG. 3.

Fit parameter is plotted vs the inverse temperature of Samples A, B, and C. All samples show the dependency of the fit parameter, which is denoted by the solid line.

Tables

Generic image for table
Table I.

Carrier concentration, mobility, and resistivity of the used ZnO and samples at 1.65 K and RT.

Generic image for table
Table II.

Values of the parameters , , , and obtained from least-squares fits to the data.

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/content/aip/journal/apl/87/11/10.1063/1.2045553
2005-09-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoresistance in epitaxially grown degenerate ZnO thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045553
10.1063/1.2045553
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