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Tungsten nanocrystals embedded in high- materials for memory application
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10.1063/1.2045555
/content/aip/journal/apl/87/11/10.1063/1.2045555
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045555
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM surface morphology of (a) HfAlO oxide, (b) as-deposited W layer, and (c) W layer after RTA at 950 °C for 60 s (scanning area is ).

Image of FIG. 2.
FIG. 2.

(a)–(f) Effects of annealing temperature and time on the formation of W-NCs using SEM surface morphology on HfAlO dielectric. (g) Evolution of density and average size of nanocrystals as a function of annealing temperature and time.

Image of FIG. 3.
FIG. 3.

(a) SEM picture of W-NCs dots distribution. The inset is a cross-sectional TEM image of W-NC on . (b) Energy diffractive x-ray profiles on W-NCs and near the interface between dielectric and Si-substrate.

Image of FIG. 4.
FIG. 4.

(a) Positive and negative shifts of hysteresis curves vs gate voltage and (b) typical high frequency (1 MHz) hysteresis curves obtained by stressing up to for and stack devices (S1: , S2: , and S3: ). The results are compared with the control devices without W-NCs.

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/content/aip/journal/apl/87/11/10.1063/1.2045555
2005-09-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tungsten nanocrystals embedded in high-k materials for memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045555
10.1063/1.2045555
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