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Complementary inverter based on interface doped pentacene
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10.1063/1.2045556
/content/aip/journal/apl/87/11/10.1063/1.2045556
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045556
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic configuration of the O-CMOS inverter in (a) top view and (b) cross section. For both and channels, the channel length and width are and 0.8 cm, respectively.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of the O-CMOS inverter (a) with and (b) without load resistor . Respective equivalent circuits are shown in the insets.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of the - and -type transistors utilized in the O-CMOS inverter recorded at a drain source voltage of in logarithmic representation. In analogy to the inverter circuit, the source potential of the -type transistor corresponds to the supply voltage of 60 V. The field-effect mobilities of the - and -type transistors are 0.11 and , respectively.

Image of FIG. 4.
FIG. 4.

Transfer characteristics of an -type OFET realized with PMMA interlayer recorded at a drain source voltage of in logarithmic representation. Field-effect mobility is .

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/content/aip/journal/apl/87/11/10.1063/1.2045556
2005-09-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Complementary inverter based on interface doped pentacene
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045556
10.1063/1.2045556
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