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Schematic configuration of the O-CMOS inverter in (a) top view and (b) cross section. For both and channels, the channel length and width are and 0.8 cm, respectively.
Transfer characteristics of the O-CMOS inverter (a) with and (b) without load resistor . Respective equivalent circuits are shown in the insets.
Transfer characteristics of the - and -type transistors utilized in the O-CMOS inverter recorded at a drain source voltage of in logarithmic representation. In analogy to the inverter circuit, the source potential of the -type transistor corresponds to the supply voltage of 60 V. The field-effect mobilities of the - and -type transistors are 0.11 and , respectively.
Transfer characteristics of an -type OFET realized with PMMA interlayer recorded at a drain source voltage of in logarithmic representation. Field-effect mobility is .
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