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Characteristics of a heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy
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10.1063/1.2045558
/content/aip/journal/apl/87/11/10.1063/1.2045558
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic (a) and top view (b) of the HFET studied in this experiment.

Image of FIG. 2.
FIG. 2.

Optical transmittance (a) and CL spectrum (b) of the HFET at RT.

Image of FIG. 3.
FIG. 3.

Temperature dependences of the Hall mobility and sheet carrier density in the SQW with a thick ZnO well.

Image of FIG. 4.
FIG. 4.

(a) and (b) characteristics measured for the HFET at RT.

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/content/aip/journal/apl/87/11/10.1063/1.2045558
2005-09-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2045558
10.1063/1.2045558
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