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(a) XRD spectrum of a 30 period (1.8 nm)/GaN:Si (1.8 nm) MQW sample. (b) cross-sectional TEM image.
8K PL spectrum of a 30 period (1.8 nm)/GaNSi (1.8 nm) MQW sample.
Photoluminescence energy as a function of well width for SQWs. The full line corresponds to interband ground-state transition energies including an electric field of .
PIA spectrum of a 30 period (1,8 nm)/GaN:Si (1.8 nm) MQW sample at for (full curve) and -polarized (dotted curve) infrared light and at for -polarized light (dashed curve). The inset shows a schematic of the MQW band structures.
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