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multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM micrographs of MQWs layers grown on (111)-oriented bonded SOI substrates. (a) Sample A with the blue luminescence centered around and (b) sample B with the blue-green luminescence centered around .

Image of FIG. 2.
FIG. 2.

High-resolution x-ray diffraction profiles of MQWs layer grown on (111)-oriented bonded SOI substrates measured with scan mode. (a) Sample A and (b) Sample B. The different order satellite peaks are labeled and the peaks from GaN template and transitional buffer layer are also shown.

Image of FIG. 3.
FIG. 3.

Typical cross-sectional and plan-view SEM images of MQWS grown on SOI substrates. SEM images clearly show the SOI substrate, buried oxide (BOX), and nitride epilayers. (a) Cross-sectional microstructures of III-nitride layers on weakly bonded SOI interfaces, which show that crack passing through the Si overlayer is terminated at the bonding gap or void; (b) the cross-sectional microstructures of III-nitride layers on strongly bonded SOI interfaces without any bonding gap or voids; (c) the plan-view microstructures with cracks and peel-off marked by arrows for MQWs on weakly bonded SOI; and (d) the plan-view microstructures of MQWs on strongly bonded SOI, which shows reduced crack density.

Image of FIG. 4.
FIG. 4.

Room-temperature PL spectra of MQWs with blue-green luminescence centered around 424.7 and . Sample A with a well and barrier width and sample B with a well and barrier width.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates