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AFM micrographs of MQWs layers grown on (111)-oriented bonded SOI substrates. (a) Sample A with the blue luminescence centered around and (b) sample B with the blue-green luminescence centered around .
High-resolution x-ray diffraction profiles of MQWs layer grown on (111)-oriented bonded SOI substrates measured with scan mode. (a) Sample A and (b) Sample B. The different order satellite peaks are labeled and the peaks from GaN template and transitional buffer layer are also shown.
Typical cross-sectional and plan-view SEM images of MQWS grown on SOI substrates. SEM images clearly show the SOI substrate, buried oxide (BOX), and nitride epilayers. (a) Cross-sectional microstructures of III-nitride layers on weakly bonded SOI interfaces, which show that crack passing through the Si overlayer is terminated at the bonding gap or void; (b) the cross-sectional microstructures of III-nitride layers on strongly bonded SOI interfaces without any bonding gap or voids; (c) the plan-view microstructures with cracks and peel-off marked by arrows for MQWs on weakly bonded SOI; and (d) the plan-view microstructures of MQWs on strongly bonded SOI, which shows reduced crack density.
Room-temperature PL spectra of MQWs with blue-green luminescence centered around 424.7 and . Sample A with a well and barrier width and sample B with a well and barrier width.
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