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Electron-beam-induced growth of silicon multibranched nanostructures
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) TEM image of a porous silicon film showing a fresh surface (zone 1) and a contiguous irradiated area (zone 2). (b) Gives the schematic of the structural details of an active site.

Image of FIG. 2.
FIG. 2.

A sequence of four TEM images summarizes the growth process of a nanotree. In the first image, the arrows points to two actives sites from where the trees started to grow. The total time elapsed between the first and the last image was . Starting at the tip of the active site a subnanometer trunk starts to grow and increases in thickness as the multibranching process takes place in a hierarchical manner.

Image of FIG. 3.
FIG. 3.

TEM image of a single nanotree in which up to six sequential branching steps can be observed.

Image of FIG. 4.
FIG. 4.

TEM image of overirradiated trees shows the morphological modifications of the branches in which coalescence made the upper branches to be reduced in size and increased in thickness.

Image of FIG. 5.
FIG. 5.

(a) TEM image of a collection of trees grown along the modified porous silicon surface. (b) Shows the TEM image of a highly dense region of trees. The comparison between both “nanoforests” shows that branching is affected by the close proximity of the trees.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron-beam-induced growth of silicon multibranched nanostructures