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(Color online) (a) SEM morphology of a representative bundled boron nanowire sample grown on Au-coated Si substrate at for . The bundles of nanowires were well distributed on the Si substrate; (b) SEM/EDS elemental scans along a single boron nanowire removed from a bundle. O has a strong peak near the interface between the tip and the nanowire stem.
(a) and (b) SEM morphology of a representative bundled BNW sample grown on Au-coated Si substrate at for viewed from top (a) and side (b), respectively. The BNWs in these bundles have flat tips containing only boron and oxygen. (c) and (d) show representative TEM images revealing short and straight boron nanowire branches taken from the bundles. Straight boron core and outside oxide layers are clearly seen.
Average diameter of Au droplets formed on the surface of the Si substrates after the Au-coated Si substrates were heated treated at different temperatures for in vacuum (squares) and in boron oxide vapor (triangles), respectively. Atomic force microscopy was used to measure the diameter of the Au droplets.
(Color online) A schematic description of the BNW initiation process at respectively high temperature close to the Au-B eutectic temperature (a) and much below it (b).
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