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Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond
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10.1063/1.2048807
/content/aip/journal/apl/87/11/10.1063/1.2048807
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2048807
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark current in function of the applied voltage measured (a) in air and (b) under a vacuum; and (c) photocurrent at vs the applied voltage measured under a vacuum.

Image of FIG. 2.
FIG. 2.

Responsivity plotted as a function of the applied voltage.

Image of FIG. 3.
FIG. 3.

Dark current measured after the high-temperature annealing at in function of the applied voltage, (a) in air and (b) under a vacuum; (c) photocurrent at vs the applied voltage measured under a vacuum.

Image of FIG. 4.
FIG. 4.

Spectral photoresponse (responsivity vs wavelength) measured (a) on the as-grown state and (b) after the high-temperature annealing at .

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/content/aip/journal/apl/87/11/10.1063/1.2048807
2005-09-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2048807
10.1063/1.2048807
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