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Schematic drawings of the novel layer transfer approach: (a) Introduce H trapping sites (such as defects, strain, impurities, etc.) at a well-defined depth into a silicon wafer; (b) plasma hydrogenate the sample enabling H entrapment at the specific depth; (c) clean and activate the wafer surfaces and then bond the hydrogenated silicon wafer to a handle wafer with an oxide top layer; and (d) anneal the bonded pair to induce layer splitting and transfer.
Cross-section transmission electron micrographs obtained from (a) final SOI sample fabricated by plasma hydrogenation combined with wafer bonding in the present work; (b) dose of boron preimplanted and activated sample after hydrogenation for at (after Ref. 6). Bright-field images, with the 220 Bragg condition satisfied.
RBS random and channeling spectrum from the final SOI sample. RBS analyses were performed using a He analyzing beam. The detector was located 167° away from the direction of the incident beam.
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