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High electron mobility W-doped thin films by pulsed laser deposition
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10.1063/1.2048829
/content/aip/journal/apl/87/11/10.1063/1.2048829
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2048829

Figures

Image of FIG. 1.
FIG. 1.

Room temperature and (a) Hall mobility, (b) conductivity, and (c) carrier density for several IWO films prepared on fused and single-crystal YSZ (001) substrates. The symbols are explained in the text. The lines are a guide.

Image of FIG. 2.
FIG. 2.

XRD patterns for textured IWO films on (001) YSZ (a), polycrystalline IWO films on fused (b), and calculated for undoped (c). Asterisks mark the position of YSZ reflections.

Image of FIG. 3.
FIG. 3.

Optical transmission , reflection , and reflection-corrected transmission for a IWO film on a fused substrate. Inset: Burstein-Moss shift illustrated by vs .

Tables

Generic image for table
Table I.

Nominal doping level for targets and resultant as determined by EPMA for 0.5 and incident laser fluence.

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/content/aip/journal/apl/87/11/10.1063/1.2048829
2005-09-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High electron mobility W-doped In2O3 thin films by pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/11/10.1063/1.2048829
10.1063/1.2048829
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