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(a) The THz waves radiated from SI (100) GaAs wafer and GaAs and structures. (b) THz waves in the frequency domain obtained by applying the fast Fourier transform to the THz waves in the time domain.
Intensities of THz radiations from and GaAs structures as function of the thickness of the intrinsic layer.
The built-in electric field as a function of the intrinsic layer thickness, the negative values of thickness represent the thickness of the buffer layer that has been etched away.
The schematic diagram of field distribution in the surface-intrinsic- structure with the direction of the electric field, normal to the surface, pointing from the depletion layer to the surface.
The number of photo-excited free charged carriers as a function of the intrinsic layer thickness.
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