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Terahertz radiation from InAlAs and GaAs surface intrinsic- structures and the critical electric fields of semiconductors
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10.1063/1.2051788
/content/aip/journal/apl/87/12/10.1063/1.2051788
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2051788
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Figures

Image of FIG. 1.
FIG. 1.

(a) The THz waves radiated from SI (100) GaAs wafer and GaAs and structures. (b) THz waves in the frequency domain obtained by applying the fast Fourier transform to the THz waves in the time domain.

Image of FIG. 2.
FIG. 2.

Intensities of THz radiations from and GaAs structures as function of the thickness of the intrinsic layer.

Image of FIG. 3.
FIG. 3.

The built-in electric field as a function of the intrinsic layer thickness, the negative values of thickness represent the thickness of the buffer layer that has been etched away.

Image of FIG. 4.
FIG. 4.

The schematic diagram of field distribution in the surface-intrinsic- structure with the direction of the electric field, normal to the surface, pointing from the depletion layer to the surface.

Image of FIG. 5.
FIG. 5.

The number of photo-excited free charged carriers as a function of the intrinsic layer thickness.

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/content/aip/journal/apl/87/12/10.1063/1.2051788
2005-09-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2051788
10.1063/1.2051788
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