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Solid-state supercapacitors for electronic device applications
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10.1063/1.2051797
/content/aip/journal/apl/87/12/10.1063/1.2051797
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2051797
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Frequency-dependent specific capacitance for a capacitor measured at relative humidities of 34% and 80%, respectively.

Image of FIG. 2.
FIG. 2.

LiF-thickness dependence of device capacitance and resistance measured at 44% RH and room temperature without dc bias.

Image of FIG. 3.
FIG. 3.

The capacitance response to the applied voltage pulse. The inset shows the device current response to an applied voltage pulse. The capacitance, at various time windows, is obtained by fitting the charging current at various time ranges (0–2, 2–4, 4–10, and ) using , where ; , , and (device capacitance, assuming it is constant in a given time range) are the fitting parameters.

Image of FIG. 4.
FIG. 4.

The schematic diagram showing the capacitor’s working principle.

Image of FIG. 5.
FIG. 5.

The typical gate voltage dependence of the source-drain current, where the transistor shows low working voltage and high current output.

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/content/aip/journal/apl/87/12/10.1063/1.2051797
2005-09-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solid-state supercapacitors for electronic device applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2051797
10.1063/1.2051797
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