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Frequency-dependent specific capacitance for a capacitor measured at relative humidities of 34% and 80%, respectively.
LiF-thickness dependence of device capacitance and resistance measured at 44% RH and room temperature without dc bias.
The capacitance response to the applied voltage pulse. The inset shows the device current response to an applied voltage pulse. The capacitance, at various time windows, is obtained by fitting the charging current at various time ranges (0–2, 2–4, 4–10, and ) using , where ; , , and (device capacitance, assuming it is constant in a given time range) are the fitting parameters.
The schematic diagram showing the capacitor’s working principle.
The typical gate voltage dependence of the source-drain current, where the transistor shows low working voltage and high current output.
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