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Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in matrix
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Image of FIG. 1.
FIG. 1.

Multilayer model used in the SE analysis. The thickness of the thin film grown on the silicon substrate is , the distributes from the surface to the depth of in the film, and thus the thickness of the pure layer is . The -distributed layer with the thickness is divided into 25 sublayers with equal thickness . The volume fraction of the in each sublayer is . The diagram is not drawn to scale.

Image of FIG. 2.
FIG. 2.

Typical spectral fitting of the ellipsometric angles and . The sample is annealed at for .

Image of FIG. 3.
FIG. 3.

Real and imaginary parts of the complex dielectric functions of both the annealed for 0, 30, and and the bulk crystalline silicon as functions of photon energy.


Generic image for table
Table I.

Size, band gap, and static dielectric constant of annealed for different durations. and are the band gap and the static dielectric constant of obtained from the spectral fittings based on the four-term FB model, respectively. is the band gap obtained from the calculation with Eq. (1), while is the static dielectric constant obtained from the calculation with Eq. (2).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix