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AFM images taken after UHV annealing of (111) Si layers. The initial thicknesses were (a) 9 nm, (b) 7 nm, and (c) 5 nm.
An AFM image showing the atomic steps on the (111) Si surface. The steps run almost normal to the direction.
Cross-sectional TEM images of a wire: (a) an overall view, (b) a higher-magnification image with facet assignments.
An AFM image taken at the pattern edge of the (111) Si layer.
(a) An AFM image taken at the edge of a wire in the direction. The observed wire in (a) and the hypothetical wire (discussed in the main text) are schematically shown in (b) and (c), respectively.
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