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Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
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10.1063/1.2053354
/content/aip/journal/apl/87/12/10.1063/1.2053354
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053354
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images taken after UHV annealing of (111) Si layers. The initial thicknesses were (a) 9 nm, (b) 7 nm, and (c) 5 nm.

Image of FIG. 2.
FIG. 2.

An AFM image showing the atomic steps on the (111) Si surface. The steps run almost normal to the direction.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of a wire: (a) an overall view, (b) a higher-magnification image with facet assignments.

Image of FIG. 4.
FIG. 4.

An AFM image taken at the pattern edge of the (111) Si layer.

Image of FIG. 5.
FIG. 5.

(a) An AFM image taken at the edge of a wire in the direction. The observed wire in (a) and the hypothetical wire (discussed in the main text) are schematically shown in (b) and (c), respectively.

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/content/aip/journal/apl/87/12/10.1063/1.2053354
2005-09-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053354
10.1063/1.2053354
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