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Series of SEE photographs taken for a very small injected dose (, i.e., ) when sample is isochronously annealed. The poled regions appear darker. There is a contrast at low temperature, which disappears progressively. Above , no more contrast is detectable. The one seen above this temperature is due to the detachment of the film from the silicon substrate.
Plot of the variation of the SEEY difference between poled and unpoled regions vs the annealing temperature. This difference between the two regions became zero at .
Change on annealing temperature of SEE for a dose of , i.e., , i.e., when the SEE saturation is approached in all regions. We can see that the contrast begins to vanish above . Then for larger annealing temperature, the reappearance of a contrast is due to deterioration of the layer.
Change on dose of the SEE for an annealing temperature of . The contrast is small for a low dose especially at the beginning of the irradiation (, i.e., ) because the poling electric field has vanished. A larger contrast is obtained for larger but intermediate dose (, i.e., ). It is finally vanishing for very large doses (, i.e., ). The sketch of the curves deduced from the photographs shows that the contrast arises from a better trapping in the unpoled region than in poled one. For higher annealing temperature any contrast disappears.
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