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Scanning transmission electron microscopy of gate stacks with dielectrics and TiN electrodes
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10.1063/1.2053362
/content/aip/journal/apl/87/12/10.1063/1.2053362
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053362
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) HAADF images of the (a) the and (b) annealed samples. The dashed lines are a guide to the eye to indicate the approximate position of the interfacial layer. Note the roughening of interfaces after the anneal.

Image of FIG. 2.
FIG. 2.

(Color online) (a) High-resolution HAADF image of the lower interface of the stack and location of the line intensity profiles shown in (b) and (c). The inset shows a magnified portion of the image with different brightness/contrast settings to show the Hf clusters (circled). (b) Intensity profile along line 1 in (a). (c) Intensity profiles along lines 2 and 3 in (a).

Image of FIG. 3.
FIG. 3.

(Color online) Low-loss EELS recorded from the middle of the films annealed at different temperatures and from the reference powder. Significant peaks are labeled A–H.

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/content/aip/journal/apl/87/12/10.1063/1.2053362
2005-09-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053362
10.1063/1.2053362
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