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Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates
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10.1063/1.2053364
/content/aip/journal/apl/87/12/10.1063/1.2053364
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053364
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM [200] and [022] bright field images from the quantum well area of sample A, B, and C.

Image of FIG. 2.
FIG. 2.

Absorption recovery time against the thickness of InP lattice reformation layer. Inset: time resolved reflectivity response of SESAM samples with 75 nm InP lattice-reformation layer.

Image of FIG. 3.
FIG. 3.

Reflectivity as a function of the pulse energy fluence for sample C.

Image of FIG. 4.
FIG. 4.

Intensity autocorrelation traces for passive mode-locked operation obtained using SESAMs with recovery time of 150 ps and 40 ps.

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/content/aip/journal/apl/87/12/10.1063/1.2053364
2005-09-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2053364
10.1063/1.2053364
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