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(a) Schematic drawing of the nanopillars’ single-electron transistor. The nanopillars consists of . The side gate is grown vertically at a distance of away from the silicon island. Figure 1(b) shows a top view of the nanopillars after chemical etch prior to oxidation. Notice that the active zone width is very narrow at after lateral wet etch. Figure 1(c) illustrates the finalized active zone of , while the quantum-dot cavity in it is even smaller with a volume of .
Drain current as a function of drain-source voltage for fixed ranging from , in step of .
Gate-dot coupling strength vs gate oxide thickness. Point (◇) is from Ref. 4, (▿) Ref. 3, (▵) Ref. 2, (엯) Ref. 1, and (◻) Ref. 5. The solid line is an exponential fit using the formula and . The inset shows the charging threshold voltage vs the bias , as obtained from Fig. 2. The solid line is a linear fit.
Dependence of drain current vs gate voltage of 0.01, 0.1, 0.2, 0.3 and , respectively.
The Coulomb charging threshold voltage as a function of . The modulations can be clearly seen.
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