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(a) Bright-field cross-sectional TEM image obtained in [1-100] orientation with showing the full heterostructure, with threading dislocations in AlN bending upon passing into AlGaN. (b) Enlarged image showing that dislocations bend at the interface and not above it where Si was introduced.
Cross-sectional TEM image of specimen after rotating about [11-20] to broaden the projection of the interface, showing a misfit dislocation on the right side.
In-plane strain of AlGaN layers measured by XRD for several thicknesses (●), and strain calculated for pseudomorphic growth (∎). The linear change in strain verifies a prediction of the model for relaxation (see Ref. 6 ).
Relaxation of on AlN.
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