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Relaxation of compressively-strained AlGaN by inclined threading dislocations
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10.1063/1.2056582
/content/aip/journal/apl/87/12/10.1063/1.2056582
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2056582

Figures

Image of FIG. 1.
FIG. 1.

(a) Bright-field cross-sectional TEM image obtained in [1-100] orientation with showing the full heterostructure, with threading dislocations in AlN bending upon passing into AlGaN. (b) Enlarged image showing that dislocations bend at the interface and not above it where Si was introduced.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of specimen after rotating about [11-20] to broaden the projection of the interface, showing a misfit dislocation on the right side.

Image of FIG. 3.
FIG. 3.

In-plane strain of AlGaN layers measured by XRD for several thicknesses (●), and strain calculated for pseudomorphic growth (∎). The linear change in strain verifies a prediction of the model for relaxation (see Ref. 6 ).

Tables

Generic image for table
Table I.

Relaxation of on AlN.

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/content/aip/journal/apl/87/12/10.1063/1.2056582
2005-09-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxation of compressively-strained AlGaN by inclined threading dislocations
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/12/10.1063/1.2056582
10.1063/1.2056582
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