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Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors
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10.1063/1.2067690
/content/aip/journal/apl/87/13/10.1063/1.2067690
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/13/10.1063/1.2067690
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the CNTFET structure. The highly doped -type Si substrate served as a backgate. (b) AFM image of a typical CNTFET sample. A SWNT bridged the source and the drain electrodes.

Image of FIG. 2.
FIG. 2.

Transistor characteristics of the CNTFETs with a channel length of 800 nm. The measurement was carried out with ranging from to 8 V in a step of 1 V at ambient environment.

Image of FIG. 3.
FIG. 3.

curves measured at the voltage sweeps of to to and to with at room temperature, respectively. Pronounced hysteresis behavior was clearly observed.

Image of FIG. 4.
FIG. 4.

Retention characteristics from the CNTFETs (a) with and (b) without two-stage annealing treatment. The measurements were carried out at the gate voltage sweeps of to at ambient conditions.

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/content/aip/journal/apl/87/13/10.1063/1.2067690
2005-09-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pronounced hysteresis and high charge storage stability of single-walled carbon nanotube-based field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/13/10.1063/1.2067690
10.1063/1.2067690
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