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(Color online) (a) Schematic diagram of the CNTFET structure. The highly doped -type Si substrate served as a backgate. (b) AFM image of a typical CNTFET sample. A SWNT bridged the source and the drain electrodes.
Transistor characteristics of the CNTFETs with a channel length of 800 nm. The measurement was carried out with ranging from to 8 V in a step of 1 V at ambient environment.
curves measured at the voltage sweeps of to to and to with at room temperature, respectively. Pronounced hysteresis behavior was clearly observed.
Retention characteristics from the CNTFETs (a) with and (b) without two-stage annealing treatment. The measurements were carried out at the gate voltage sweeps of to at ambient conditions.
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