Ultrafast direct writing scheme with unipolar field pulses for synthetic antiferromagnetic magnetic random access memory cells
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(Color online.) Schematic drawing of the geometry used in the numerical simulations. A circular element of radius with uniaxial in-plane anisotropy is employed. The red and the blue arrow indicate the magnetizations of the first and the second magnetic layer of the SAF, respectively. The dashed lines mark the magnetic easy and the in-plane magnetic hard axis of the element.
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(Color online.) Diagram of the switching behavior of a nonbalanced SAF element (, coupling field strength ) and uniaxial anisotropy field as a function of the applied field pulse strengths . White areas reflect switching of the element, gray areas nonswitching. (a) The initial magnetization state is chosen to be ‘1’ and is switched to ‘0.’ The pulse lengths are , the pulse delay , which is sketched in the inset. (b) Switching scheme with reversed field pulse sequence, i.e., describing the backswitching from ‘0’ to ‘1,’ which is the initial state of the element in (a). (c) Time dependence of the normalized component of the magnetization parallel to the easy axis of the circular element of each layer, (black curve), (red curve), corresponding to a pulse strength marked with a cross inside the red area.
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