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Capacitance-voltage characteristics of a MOSHFET and HFET.
Two terminal gate-source characteristics of MOSHFET and HFETs before and after passivation.
Extrinsic transconductance for a MOSHFET, and unpassivated and passivated HFETs (the gate length is ).
Output power density at for a MOSHFET and unpassivated and passivated HFETs measured at various drain biases on devices with and gate length and width, respectively. The dashed lines are guides for the eye.
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