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Electric field vs current density characteristics. Inset: Modal gain as a function of current density. The horizontal dotted line shows the calculated total losses.
Schematic conduction-band diagram of Structure B showing two active regions separated by an injector region. The moduli squared of the relevant wave functions are shown. The upper (3) and lower (2) laser levels are in bold and the uppermost miniband state (1) is shown as a solid line. The layer sequence of one period of the structure (in Å) starting from the injection barrier is: . The bold script denotes the barriers, the normal script the wells. The underlined wells are doped with a sheet doping density of . The calculated energy differences are and (The LO-phonon energy of is ).
Calculated threshold current densities as a function of temperature. The dashed lines show the exponential fits used to calculate the characteristic temperatures .
Electron temperature as a function of current density at both doping densities and at lattice temperatures of 77 and . The coupling constants were calculated from straight line fits to the data. Inset: Electron temperature as a function of electrical power density . The straight line fits were used to calculate the coupling constants .
Calculated subband populations in the structures. ULL: Upper laser level, LLL: Lower laser level, GL: Ground level, LIL: Lowest injector level.
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