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Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface
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View: Figures


Image of FIG. 1.
FIG. 1.

Dependence on incident optical power of the photosensitivity of a Si microplasma device having a aperture. All data were acquired at and with the quiescent voltage and current of the device maintained at and , respectively. Uncertainties in both photosensitivity and incident power are indicated for most of the measurements. The inset is a generalized diagram (not to scale) of the photodetector device structure.

Image of FIG. 2.
FIG. 2.

Comparison of the contributions to the overall photosensitivity from the semiconductor-plasma device (●) and photoconductivity in bulk Si (엯). The same data are illustrated by the inset but the abscissa now represents intensity, expressed as . The measurement wavelength and Ne pressure are again 780 nm and 500 Torr, respectively, and the photodetector is a device.

Image of FIG. 3.
FIG. 3.

Spectral response of (엯) and (●) Si microplasma devices in the region for Ne pressures of 500 Torr and 800 Torr, respectively. All measurements were recorded for an intensity, incident on the detector surface, of and the error bars represent one standard deviation associated with measurements on four devices of each size. The uncertainties in wavelength represent the spectral width (FWHM) of each interference filter.

Image of FIG. 4.
FIG. 4.

Qualitative energy band diagrams for: (a) The -type Si interface (adapted from Ref. 6), and (b) the -Si interface.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface