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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
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10.1063/1.2076436
/content/aip/journal/apl/87/14/10.1063/1.2076436
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076436

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic plot of PDMILC M10 poly-Si TFT with source, drain, gate, ten nanowire channels, contact holes, and MILC seeding window. The distance between the MILC seeding window edge and middle of active channel is . (b) Cross-sectional view of PDMILC TFT, which was a conventional MOSFET with offset structure.

Image of FIG. 2.
FIG. 2.

(a) SEM photograph of active pattern with the source, the drain, ten nanowire channels, and MILC seeding window. The inset SEM photograph shows the each nanowire width of . (b) SEM photograph of poly-Si grain structure in active channel of S1 MILC poly-Si TFT following Secco solution etching. The average poly-Si lateral grain size is . The inset optical microscopy photograph depicts a MILC length of . (c) SEM photograph of grain structure in one of ten nanowire MILC poly-Si TFTs (M10) following Secco etching. The poly-Si lateral grain length is .

Image of FIG. 3.
FIG. 3.

Transfer curves (left) and field-effect mobility (right) of a series of PDMILC TFT of a multichannel with various widths at the gate length of .

Image of FIG. 4.
FIG. 4.

Field-effect mobility average and standard deviation vs the gate length, for a particular M10 TFT structure.

Tables

Generic image for table
Table I.

Devices dimension of S1, M2, M5, and M10 PDMILC poly-Si TFTs. All devices have the same active channel thickness of , gate TEOS-oxide thickness, of , and gate length of .

Generic image for table
Table II.

Device parameters average and standard deviation value of M10, M5, M2, and S1 TFTs with gate length of . The is defined as the gate voltage required to achieve a normalized drain current of at .

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/content/aip/journal/apl/87/14/10.1063/1.2076436
2005-09-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076436
10.1063/1.2076436
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