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Modulation of the high mobility two-dimensional electrons in using atomic-layer-deposited gate dielectric
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10.1063/1.2076439
/content/aip/journal/apl/87/14/10.1063/1.2076439
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076439
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of an -channel MOSFET with ALD-grown as gate dielectric. The thickness of the oxide layer is .

Image of FIG. 2.
FIG. 2.

Longitudinal resistivity and Hall resistivity as a function of magnetic field at , with an applied front gate voltage . The electron density and mobility are and , respectively. Major integer Quantum Hall states are indicated by arrows. The excitation current is .

Image of FIG. 3.
FIG. 3.

Four-terminal resistance and the gate leakage current as a function of the gate bias. In the inset, the response of the 2DES to is shown for two metal-oxide-semiconductor devices. For the device with ALD gate (solid line), sweeps from in and stays afterward. For the device with PECVD as gate dielectric (dashed line), sweeps from in and keeps constant afterward. The vertical bars show the time when stops sweeping.

Image of FIG. 4.
FIG. 4.

Carrier density vs for (a) the ALD gate, (b) the Pd Schottky gate, and (c) the PECVD gate. Straight lines are linear fits to the measured data in the depletion region.

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/content/aip/journal/apl/87/14/10.1063/1.2076439
2005-09-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of the high mobility two-dimensional electrons in Si∕SiGe using atomic-layer-deposited gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076439
10.1063/1.2076439
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