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Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
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10.1063/1.2076440
/content/aip/journal/apl/87/14/10.1063/1.2076440
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076440
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SRP and SIMS profile of B for the PAI and non-PAI samples. The PAI energy was . An order of increase of electrically activated concentration is clearly shown.

Image of FIG. 2.
FIG. 2.

XTEM pictures of the PAI samples before thermal annealing: (a) After germanium implantation, an amorphous layer of was formed and (b) after the subsequent boron implantation, no amorphous region can be observed.

Image of FIG. 3.
FIG. 3.

The level of activation as a function of PAI energy. After RTA, 100% of boron activation was obtained for the top amorphous layer of the PAI sample.

Image of FIG. 4.
FIG. 4.

A comparison of PAI effect on bulk Ge and GeOI substrates. The PAI condition was at dose of .

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/content/aip/journal/apl/87/14/10.1063/1.2076440
2005-09-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2076440
10.1063/1.2076440
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