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SRP and SIMS profile of B for the PAI and non-PAI samples. The PAI energy was . An order of increase of electrically activated concentration is clearly shown.
XTEM pictures of the PAI samples before thermal annealing: (a) After germanium implantation, an amorphous layer of was formed and (b) after the subsequent boron implantation, no amorphous region can be observed.
The level of activation as a function of PAI energy. After RTA, 100% of boron activation was obtained for the top amorphous layer of the PAI sample.
A comparison of PAI effect on bulk Ge and GeOI substrates. The PAI condition was at dose of .
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