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Mapping of trap densities and energy levels in semiconductors using a lock-in infrared camera technique
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10.1063/1.2077833
/content/aip/journal/apl/87/14/10.1063/1.2077833
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2077833
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Infrared emission of a Cz–Si wafer obtained using lock-in infrared emission measurements at . The mappings are measured at three different illumination intensities: (a) suns, (b) suns, and (c) 1 sun.

Image of FIG. 2.
FIG. 2.

Exemplary injection-dependent lifetime curves at two different positions (marked in Figs. 1 and 3) of a Cz–Si wafer obtained using lock-in infrared emission measurements at .

Image of FIG. 3.
FIG. 3.

(a) Trap density mapping of a Cz–Si wafer measured using the ITM method. (b) Mapping of the recombination lifetime of the same sample measured using the ILM technique. A clear anticorrelation between the trap density and the recombination lifetime mapping is found. (c) Plot of the recombination lifetime vs the trap density at each point of the mappings. The linear fit results in a negative slope of .

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/content/aip/journal/apl/87/14/10.1063/1.2077833
2005-09-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mapping of trap densities and energy levels in semiconductors using a lock-in infrared camera technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2077833
10.1063/1.2077833
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