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Infrared emission of a Cz–Si wafer obtained using lock-in infrared emission measurements at . The mappings are measured at three different illumination intensities: (a) suns, (b) suns, and (c) 1 sun.
Exemplary injection-dependent lifetime curves at two different positions (marked in Figs. 1 and 3) of a Cz–Si wafer obtained using lock-in infrared emission measurements at .
(a) Trap density mapping of a Cz–Si wafer measured using the ITM method. (b) Mapping of the recombination lifetime of the same sample measured using the ILM technique. A clear anticorrelation between the trap density and the recombination lifetime mapping is found. (c) Plot of the recombination lifetime vs the trap density at each point of the mappings. The linear fit results in a negative slope of .
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