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Varistors made of multilayers on -type GaN substrates
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10.1063/1.2081119
/content/aip/journal/apl/87/14/10.1063/1.2081119
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081119

Figures

Image of FIG. 1.
FIG. 1.

Current density-voltage relationships of a -type GaN substrate (dashed line) and -period multilayers on -type GaN substrates (solid lines). The ’s here are 2, 3, and 5. The inset shows the architecture of the 3-period multilayers on a -type GaN substrate under forward bias.

Image of FIG. 2.
FIG. 2.

Energy band structures for electrons migrating through the 3-period multilayers on a -type GaN substrate. The dashed line refers to the case of forward bias, while the backward bias case is denoted with the dot line. The , , and are the energy levels of a conduction band, Fermi level, and a valence of a specimen. The numbers indicates the energy differences in the unit of eV. The energy levels are not in scale.

Image of FIG. 3.
FIG. 3.

Energy band structures for electrons migrating through the cascading films with a bridging Ag film. The dashed line refers to the case of forward bias, while the backward bias case is denoted with the dotted line. The , , and are the energy levels of a conduction band, Fermi level, and a valence of a specimen. The numbers indicates the energy differences in the unit of eV. The energy levels are not in scale.

Image of FIG. 4.
FIG. 4.

Current density-voltage relationships of a -type GaN substrate (dashed line) and the film (solid line). The inset shows the architecture of the cascading films with a bridging Ag film under forward bias.

Image of FIG. 5.
FIG. 5.

Current density-voltage relationships of a -type GaN substrate (dashed line) and films possessing various periods of layers (solid lines). An Ag film is used to connect two films.

Tables

Generic image for table
Table I.

Values of and for the measured current density-voltage curves (shown in Fig. 5 ) of the films. Here is the period numbers of multilayers.

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/content/aip/journal/apl/87/14/10.1063/1.2081119
2005-09-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Varistors made of indium tin oxide∕Si multilayers on p-type GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081119
10.1063/1.2081119
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