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(a) Schematic laser structures and (b) band profile of the BeMgZnSe-based quantum-well laser structure. and indicate the conduction band bottom and valence band top, respectively. The energy band gaps at room temperature (RT) are shown. The value of the band offset was estimated form Ref. 10.
Excitation power density dependences of the peak emission intensity, FWHM, and TE/TM ratio at 13 K using the grating. The excited wavelength, pulse width, and repetition rate were 248 nm, 2.5 ns, and 10 Hz, respectively. The cavity length was . The laser threshold power density was .
Emission spectra at 13 K from the BeMgZnSe-based laser structure excited with different power density pulses from a KrF excimer laser using the grating with a spectrum resolution limit of 0.25 nm.
Laser characteristics at elevated temperature, 13, 90, 110, and 130 K. The grating was employed. The lasing was clearly observed from 13 to 130 K.
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