1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Drift mobility in 4H-SiC Schottky diodes
Rent:
Rent this article for
USD
10.1063/1.2081126
/content/aip/journal/apl/87/14/10.1063/1.2081126
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081126
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Forward characteristics of a Schottky diode, for temperature ranging from 80 to 700 K in 20 K steps.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the epitaxial layer resistance of a Schottky diode.

Image of FIG. 3.
FIG. 3.

Mobility and free electron concentration (dashed line) as a function of the absolute temperature for the Schottky diode. The squares represent the experimental data while the straight line refers to the fit using Eq. (7).

Loading

Article metrics loading...

/content/aip/journal/apl/87/14/10.1063/1.2081126
2005-09-29
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drift mobility in 4H-SiC Schottky diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081126
10.1063/1.2081126
SEARCH_EXPAND_ITEM