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Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
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10.1063/1.2081128
/content/aip/journal/apl/87/14/10.1063/1.2081128
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081128

Figures

Image of FIG. 1.
FIG. 1.

(a) Stress-thickness vs thickness plots for entire structure of sample 7 and (b) reflected laser intensity corresponding to the stress data in (a). 1, 2, and 3 in (b) mark the beginning of growth of the first GaN layer, the first interlayer, and the second interlayer, respectively. The average intensity, , remains constant during the entire growth period.

Image of FIG. 2.
FIG. 2.

Stress-thickness vs thickness plots for the last GaN layer in samples listed in Table I.

Image of FIG. 3.
FIG. 3.

Multibeam, bright field, cross-section TEM image of sample 7. White arrows mark the two AlN interlayers. (a) All dislocation types, the zone axis is . (b) Dislocations with a screw component only collected under (0002) two beam conditions.

Tables

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Table I.

Effect of pseudo-substrate structure on the initial stress and thickness to transition in the final GaN layer.

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/content/aip/journal/apl/87/14/10.1063/1.2081128
2005-09-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081128
10.1063/1.2081128
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