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(a) Stress-thickness vs thickness plots for entire structure of sample 7 and (b) reflected laser intensity corresponding to the stress data in (a). 1, 2, and 3 in (b) mark the beginning of growth of the first GaN layer, the first interlayer, and the second interlayer, respectively. The average intensity, , remains constant during the entire growth period.
Stress-thickness vs thickness plots for the last GaN layer in samples listed in Table I.
Multibeam, bright field, cross-section TEM image of sample 7. White arrows mark the two AlN interlayers. (a) All dislocation types, the zone axis is . (b) Dislocations with a screw component only collected under (0002) two beam conditions.
Effect of pseudo-substrate structure on the initial stress and thickness to transition in the final GaN layer.
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