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(a) AFM image of nanostripe arrays; (b) cross-section  TEM image of nanostripe arrays; (c) ED pattern of nanostripe arrays; (d) schematic cross section of the ZnO lattice viewed along the  direction. The angle between each plane with (10-10) plane is indicated by the index of the plane.
(a) The dependence of lateral periodicity of ZnO layers at on the layer thickness; (b) dependence of saturated lateral periodicity of ZnO layers on the growth temperature; (c) dependence of lateral periodicity of layers at on the Mg content; (d) dependence of stripe length of layers at on the Mg content .
AFM images and cross-section profiles of ZnO layers on vicinal ZnO (10-10) substrates with 0°-, 5°-, 10°-, and 15°-off degrees from the (10-10)-oriented surface toward the (21-10)-oriented surface, as indicated by (a), (b), (c), and (d), respectively. All stripe arrays were elongated along the  directions.
(a) The dependence of temperature on Hall mobility on ZnO layers at . The inset shows a Hall bar with arms oriented along the  and directions. The open (엯) and solid (●) circles indicate Hall mobility parallel to the  and directions, respectively. (b) vs plot of the electrical conductivity along the  and direction. The solid lines represent least-squares fittings of the data.
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