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Fabrication of field-effect transistors with polyimide and gate insulators
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10.1063/1.2081134
/content/aip/journal/apl/87/14/10.1063/1.2081134
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081134
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representations of cross-sectional view of FET devices with a (a) polyimide gate insulator and (b) BST gate insulator.

Image of FIG. 2.
FIG. 2.

(Color) (a) plots, (b) plot at , and (c) plot at for the FET with polyimide gate insulator. (d) AFM image of the polyimide surface (bottom); the cross-sectional AFM image (top) observed along the red line. The brightness in the AFM image (bottom) refers to the unevenness of the surface. As the color brightens, the part is closer to the surface.

Image of FIG. 3.
FIG. 3.

(Color) (a) plots, (b) cross-sectional SEM image, (c) plot at for the FET device with BST gate insulator. (d) AFM image of the BST surface (bottom); the cross-sectional AFM image (top) observed along the red line. In (a), the open circles refer to the plots at . The brightness in the AFM image (bottom) refers to the unevenness of the surface. As the color brightens, the part is closer to the surface.

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/content/aip/journal/apl/87/14/10.1063/1.2081134
2005-09-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2081134
10.1063/1.2081134
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