1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
ZnO extended-gate field-effect transistors as sensors
Rent:
Rent this article for
USD
10.1063/1.2084319
/content/aip/journal/apl/87/14/10.1063/1.2084319
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2084319
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD for ZnO powder fabricated by sol-gel, which was calcinated at varying temperatures.

Image of FIG. 2.
FIG. 2.

FTIR for sol-gel ZnO solution (bottom curve) and samples calcinated at different temperatures.

Image of FIG. 3.
FIG. 3.

Response of a ZnO EGFET in saturation (a) and linear (b) region when inserted into solutions with values from 2 to 12. The ion-sensitive membrane was produced by sol-gel at .

Loading

Article metrics loading...

/content/aip/journal/apl/87/14/10.1063/1.2084319
2005-09-29
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO extended-gate field-effect transistors as pH sensors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/14/10.1063/1.2084319
10.1063/1.2084319
SEARCH_EXPAND_ITEM