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Semiconductor nanowire laser and nanowire waveguide electro-optic modulators
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10.1063/1.2089157
/content/aip/journal/apl/87/15/10.1063/1.2089157
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2089157
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Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) Diagram indicating the excitation site, region of field modulation, and observed NW end. At right, superimposed PL image (recorded below laser threshold) and white-light optical micrograph of a representative CdS NW EOM-laser device. Numerals 1 and 2 indicate excitation site and observed NW end, respectively. Scale bar, . (b) Emission spectra of a CdS NW laser showing effect of a signal. (c) Modulation vs at the two indicated wavelengths for the EOM-laser in (b). Error bars reflect the standard deviation of the responses to 50 square-wave pulses at .

Image of FIG. 2.
FIG. 2.

(Color) (a) GaN NW emission spectrum above lasing threshold, with and without bias applied. Insets, recorded below threshold: top, superimposed PL and white-light image of device; scale bar is . Bottom, end emission spectra at three different bias values. (b) vs , below threshold. For this device, , . All data were recorded at room temperature.

Image of FIG. 3.
FIG. 3.

(Color) (a) Two schemes used to apply electric fields. (b) Length-normalized modulation for representative parallel-plate (PP) and fringe-field (FF) devices. PP: “A,” , , ; “B,” , , ; “C,” , , ; “D,” , , . FF: , , . Note that a positive field corresponds to .

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/content/aip/journal/apl/87/15/10.1063/1.2089157
2005-10-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor nanowire laser and nanowire waveguide electro-optic modulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2089157
10.1063/1.2089157
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