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On the performance and surface passivation of type II superlattice photodiodes for the very-long-wavelength infrared
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View: Figures


Image of FIG. 1.
FIG. 1.

The dependence of as a function of the perimeter to area ratio for passivated and unpassivated diodes. A bulk value of was extrapolated and a surface resistivity of 7 and was measured for unpassivated and silicon dioxide passivated cases, respectively.

Image of FIG. 2.
FIG. 2.

as a function of temperature. The diffusion-limited activation energy is calculated as 58.4 meV, corresponding to a cutoff wavelength of , and agrees closely with the ETBM designed cutoff of 57.5 meV.

Image of FIG. 3.
FIG. 3.

Measured device quantum efficiency, demonstrating an optical 0% cutoff energy of 69.5 meV or cutoff wavelength of . The inset shows the normalized, to zero bias values, integrated response and differential resistance-area product as a function of reverse bias. Both quantities increase, to a point, at under slight reverse bias and can result in increased detectivity.

Image of FIG. 4.
FIG. 4.

The measured detectivity demonstrated a sharp cutoff of only 17 meV at 77 K, compared to thermal broadening of 13.3 meV. The peak detectivity was at under zero bias and a 300 K, field of view.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared