1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates
Rent:
Rent this article for
USD
10.1063/1.2089175
/content/aip/journal/apl/87/15/10.1063/1.2089175
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2089175
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Reflectance at 600 nm as a function of time during growth of a structure with three near-surface InGaN QWs, grown on a nominal GaN layer above a layer. The dotted vertical lines indicate the start and end of individual growth stages; recipes feature growth pauses to accommodate temperature ramps and switching of gas flows.

Image of FIG. 2.
FIG. 2.

(a) Schematic cross section through the RPG-MQW, containing 15 QWs positioned in five groups of three. (b) Reflectance at 800 nm vs time during growth. Marker bars between dotted vertical lines indicate the high-temperature GaN growth steps used for an initial GaN layer above the layer, GaN spacers between groups of QWs, and a final cap layer.

Image of FIG. 3.
FIG. 3.

Secondary electron image of the edge of a mesa in a trilayer structure on sapphire, after etching in alkaline solution. The nominal thickness of the top GaN layer is 500 nm, and that of the layer 300 nm. The mesa etch stopped within the lower GaN layer, so that the horizontal surface visible at the bottom of the image is GaN.

Loading

Article metrics loading...

/content/aip/journal/apl/87/15/10.1063/1.2089175
2005-10-03
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/15/10.1063/1.2089175
10.1063/1.2089175
SEARCH_EXPAND_ITEM